Abstract: The growth technique of Nono-Crystallsne Dsamond（ NCD） films was studied on single-crystalline silicon by Microwave Plasma enhanced Chemical Vapor Deposition（ MPCVD） method,which was prepared respectively in CH₄ / H₂ / Ar system,CH₄ / H₂ / O₂ system and C₂H₅OH / H₂ system. By using Atomic Force Microscope（ AFM） and Laser Raman Spectroscopy methods,the morphology and quality of NCD films prepared in different systems had been detected. The results indicated that CH₄ / H₂ system with Oxygen was obviously superior to that with Argon in the promotion of high flatness NCD films; C₂H₅OH / H₂ system was more conducive to synthesize NCD films with smaller grains and higher diamond phase content. And the conclusions had also been analyzed in theory by using plasma CVD technology related theory.