蒸发源位于半球面正下方膜厚分布理论研究

基金项目:

重点实验室基金项目(9140C540302120C5401)

详细信息

THEORY RESEARCH OF FILM THICKNESS DISTRIBUTION ON HEMISPHERICAL SURFACE WITH THE EVAPORATION SOURCE DIRECTLY BELOW THE SUBSTRATE

Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China

摘要: 对蒸发源位于非平面基底-半球面正下方时膜厚均匀性进行了理论研究。通过建立无量纲模型计算了此种几何配置下,半球表面在两种常见理想蒸发源下各位置的膜厚公式以及膜厚分布方程。选择基底与蒸发源间较大的距离,可获得更大的可镀膜区域,同时该距离对基底上镀制的膜层厚度分布影响也较大。最后对实用蒸发源的发射系数,对该几何配置下半球面膜厚分布影响进行了理论研究。
- 膜厚分布 ;
- 半球面 ;
- 真空镀膜 ;
- 理论分析
Abstract: The theory research of the film thickness distribution deposited on hemispherical surface with the evaporation source directly below the substrate is reported. The formulas of film thickness on any position of the hemispherical surface were derived in the geometric disposition. The uniformity of film thickness on the hemispherical surface were analyzed by calculate the relative film thickness. As the distance from the substrate to the evaporation source increase,the coating zone with larger range can be obtained,and the thickness functions turn to analogouslinear functionfrom the exponential function. Finally,a simulation research on the influence of emission pattern of real vapor sourceswas conducted.
- thickness distribution /
- hemispherical surface /
- film deposition /
- theory analysis.