高频等离子体阴极氧化铝膜表面结构的AES研究

详细信息

AES STUDIES OF SURFACE STRUCTURE OF ANODE AL-OXIDIZED FILMS IN A HIGH FREQUENCY OXYGEN PLASMA

摘要: 用俄歇电子能谱研究了高频等离子体阳极氧化铝膜的表面结构与氧暴露量之间的函数关系。在氧化温度为350℃,氧暴露量为100 L时,观察到与氧化有关的55eV的俄歇峰。当氧暴露量大于103 L后,铝膜表面氧化层生长速度变慢,反射率趋于稳定。
- 铝膜 ;
- 等离子体氧化 ;
- 俄歇电子谱
Abstract: The surface structure of anode Al-oxidized films in high frequency oxygen plasma as a function of oxygen exposure was studied with Auger Electron Spectroscopy（AES）.When the oxidation temporature is 350℃ and oxygen exposure is 100 L,Auger peak 56 eV concerned with oxygen can be observed. As oxygen exposure is farger than 103 L,growing rate of the oxide layer becomes slower and has steadv reflectivitv on surface of Al-roxidized films.
- Al-film /
- Plasma oxidation /
- AES