Abstract: Teh microsuucture and photoelectric performance of Indium Tin Oxide film prepared by magnetron sputtering ceramic target have been studied. The testing results of X ray photoelectron spectroscopy, atomic force microscopy and spectrophotometer have been presented. They showed that the microstructure of Indium Tin Oxide film was characterized SnO₂ and In ₂O₃ phases, with content of 5.8% and 85.0%, respectively. The film surface was compact and characterized many equal crystal ball particulate with average diameter of 50 nm. The film had a transmittance over 80.0% to completely visible light and a rather high reflectivity （over 70% at 2 500 nm） to near infrared rays. Resistivity of the film is 2.7×10^-4 Ω·cm. Forbidden bandwidth of over 3.35 eV.