掺钨二氧化钒薄膜的制备与分析

刘向, 崔敬忠, 梁耀廷, 李智

刘向, 崔敬忠, 梁耀廷, 等. 掺钨二氧化钒薄膜的制备与分析[J]. 真空与低温, 2004, 10(2): 85-88.
引用本文: 刘向, 崔敬忠, 梁耀廷, 等. 掺钨二氧化钒薄膜的制备与分析[J]. 真空与低温, 2004, 10(2): 85-88.
LIU Xiang, CUI Jing-zhong, LIANG Yao-ting, et al. PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS[J]. VACUUM AND CRYOGENICS, 2004, 10(2): 85-88.
Citation: LIU Xiang, CUI Jing-zhong, LIANG Yao-ting, et al. PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS[J]. VACUUM AND CRYOGENICS, 2004, 10(2): 85-88.

掺钨二氧化钒薄膜的制备与分析

详细信息
    作者简介:

    刘向(1979-),男,山东省淄博市人,硕士研究生,从事新型功能薄膜研究。

  • 中图分类号: O484;TB43

PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS

  • 摘要: 通过调研国内外的各种制备方法,比较它们的优缺点后,选用磁控溅射法。在硅片上得到了电阻变化2个数量级的二氧化钒(VO2)薄膜。对薄膜进行电学性能的测试,结果表明:掺钨后二氧化钒薄膜的相变温度比纯的二氧化钒薄膜相变温度有所降低,掺钨后薄膜的近红外透射率也随之减小。通过X射线衍射和X射线光电子谱对薄膜的微观结构和组分进行了分析。
    Abstract: The magnetron sputtering method was used for preparation of the W doped VO2 thin films. VO2 thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate. Thin films electric property have been studied. The results indicate that the phase transition temperature of V1-XWXO2 depressed compared with VO2 . Its IR transmittance decreased too. The micro structures and compositions of the films are studied by XRD and XPS.
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出版历程
  • 收稿日期:  2004-01-12

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