在镍基板上低温生长纳米碳管膜

王升高; 汪建华; 张保华; 马志斌; 王传新; 满卫东

在镍基板上低温生长纳米碳管膜

1. 武汉化工学院等离子体化学与新材料重点实验室, 湖北武汉 430073;
2. 中国科学院等离子体物理研究所, 安徽合肥 220031

基金项目:

湖北省教育厅重点资助项目(2002A20008)。

详细信息

作者简介:
王升高(1969-),男,湖北省天门市人,博士研究生,从事纳米材料研究.

中图分类号: O646.9;TN304.055
计量
- 文章访问数: 0
- HTML全文浏览量: 0
- PDF下载量: 0
出版历程
- 收稿日期: 2002-12-05

CARBON NANOTUBE FILMS GROWN ON Ni SUBSTRATE AT LOW TEMPERATURE

1. The Key Laboratory of Plasma Chemistry and New Materials, Wuhan Institute of Chemical Technology, Wuhan 430073, China;
2. Institute of Plasma Physics, The Chinese Academy of Science, Hefei 220031, China

摘要

摘要: 纳米碳管在储能材料和场发射材料等方面具有非常广阔的应用前景。在纳米碳管的许多潜在用途中要求纳米碳管直接低温生长在具有导电能力的基板材料上。以镍片为基板材料,利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。研究表明,高纯度纳米碳管的低温合成取决于氢等离子体对碳源的有效裂解以及在纳米碳管形成初期对碳素物质的刻蚀。同时,随着微波功率的上升,纳米碳管的纯度上升、生长速率加快且形状变得较直。
- 纳米碳管膜 ;
- 微波等离子体化学气相沉积法 ;
- 氢等离子体 ;
- 镍基板 ;
- 低温
Abstract: Electron sources and CNTs（carbon nano tubes） negative materials are two of the most promising applications of CNTs in the future. The synthesis of CNTs at low temperature has received a great deal of attention and becomes a challenging issue. Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature. Because of the strong etching ability of hydrogen plasma, high pure carbon nanotubes can be produced at temperature range from 470 ℃ to 510 ℃. The temperature of Ni substrate, which was determined mainly by the plasma intensity, affects the growth of CNTs. At a substrate of 470 ℃, the CNTs are curly, whereas the CNTs were straight at temperature of 510 ℃. The grown rate of CNTs increased with the increase of plasma intensity.
- carbon nanotube film /
- microwave plasma chemical vapor deposition /
- hydrogen plasma /
- Ni substrate /
- low temperature