(Cs,O)/GaAs热退火的变角XPS定量研究

QUANTITATIVE STUDY ON（Cs,O）/GaAs UNDER ANNEALING BY ANGULAR DEPENDENT XPS

摘要: 用变角X射线光电子能谱(XPS)技术分析了GaAs光阴极的表面及其在热退火后的效应，首次定量地计算了(Cs,O)/GaAs系统的表面(Cs,O)层和界面(Ga,As)弛豫层的厚度和组分。(Cs,O)/GaAs系统在625～650℃的热退火后，(Ga,As)驰豫层厚度减薄，Ga,As的原子浓度增大；且消除了O与As的化学连接。

Abstract: The annealing effects of the GaAs surface for photocathode were analyzed by quantitative angular-dependent X-ray electron spectroscopy（XPS） technique.The thickness and composition of（Cs,O） layer and （Gs,As） transition layer were first gained. It was found that after heat annealing at 625～650℃ the thickness of （Ga,As） layer became thinner,the atom density of Ga＆ As got larger,the binding of O and As w as eliminated.