微波GaAs功率场效应晶体管烧毁机理的研究:Ⅰ.直流烧毁
Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout
-
摘要: 用扫描电镜(SEM)和扫描俄歇微探针(SAM)对国内研制开发的微波GaAs功率FET芯片在测试中的直流烧毁进行了分析研究,探讨了直流烧毁机理及物理过程。Abstract: Microwave GaAs power FET chips fabricaled by us which appear D.C. burnout during the testing arc investigated by means of scann-ing electron microscopy（SEM）and Auger microprobe（SAM）,the physics procedure and mechanism of D.C. burnout are analyzed.
下载: