Abstract: TiO₂ thin films were prepared by MOCVD,titaium isopropoxide was taken as a source matter,nitrogen as s carrier gas for the titanium precursor and oxygen as a reactive gas.The effects of the deposition temperature of TiO₂ thin films and the oxygen flow rate on the deposition rate have been ana lysed.Depending on the different parameters,the film growth behavior was kinetically controlled or diffusiblly controlled.The theroretical basis for preparing quality TiO₂ thin films was presented.