WANG Y Z,LIU Y X,ZHANG H P,et al. Calculation method of sputtering ion pump pumping speed based on PIC-MCC method[J]. Vacuum and Cryogenics,2025,31(3):405−411. DOI: 10.12446/j.issn.1006-7086.2025.03.017
Citation: WANG Y Z,LIU Y X,ZHANG H P,et al. Calculation method of sputtering ion pump pumping speed based on PIC-MCC method[J]. Vacuum and Cryogenics,2025,31(3):405−411. DOI: 10.12446/j.issn.1006-7086.2025.03.017

Calculation Method of Sputtering Ion Pump Pumping Speed Based on PIC-MCC Method

More Information
  • Received Date: November 03, 2024
  • Based on the actual operational conditions of the sputtering ion pump's Penning discharge unit, a corresponding simulation model was established by utilizing the PIC-MCC (Particle-In-Cell Monte Carlo Collision) method. The PIC-MCC method is a powerful numerical approach. The Article-In-Cell part enables accurate tracking of charged particles' trajectories in electromagnetic fields, while the Monte Carlo collision part effectively simulates various collision processes between particles, such as elastic and inelastic collisions. After establishing the simulation model using the PIC-MCC method, the open-source code picFoam was employed to perform simulations on a single Penning discharge unit. Through a series of simulations, a large amount of data on ion incident parameters was collected. These parameters included ion velocity, direction, and position.Integrating these simulation results with well-established theoretical frameworks in the field of vacuum physics, the number of sputtered titanium atoms was accurately calculated. Furthermore, by taking into account the geometric and physical parameters of the anode cylinder, which has a significant impact on the electric field distribution and ion movement within the discharge unit, the pumping speed of a single Penning discharge unit and the overall pumping speed of the sputtering ion pump were computed. In addition, a detailed analysis was carried out on the distribution patterns of ion incidence positions, incident energies, and incident angles under different working pressures. These analyses revealed the influence of pressure on the performance of the Penning discharge unit. The results demonstrated that the computed values of the pumping speed of a single Penning discharge unit and the overall pumping speed of the sputtering ion pump were in excellent agreement with the theoretical values. This research not only provides a more in-depth understanding of the sputtering ion pump's working mechanism but also offers practical guidelines for the design and optimization of sputtering ion pumps.

  • [1]
    SINGLETON J H. The performance characteristics of modern vacuum[J],Journal of Physics E:Scientific Instruments,1973,6(8):685.
    [2]
    MALEV M D,TRACHTENBERG E M. Built-in getter-ion pumps[J]. Vacuum,1973,23(11):403−409. doi: 10.1016/0042-207X(73)92530-X
    [3]
    HARTWIG H,KOUPTSIDIS J S. A new approach for computing diode sputter-ion pump characteristics[J]. Journal of Vacuum Science and Technology,1974,11(6):1154−1159. doi: 10.1116/1.1318701
    [4]
    何炜,王仁康,耿天鹏,等. 溅射离子泵的抽速计算[J]. 真空科学与技术,1982(4):199−208.
    [5]
    宁久鑫,黄海龙,王晓冬,等. 溅射离子泵抽气单元放电及离子输运仿真[J]. 东北大学学报(自然科学版),2020,41(7):962−967.
    [6]
    HA T,CHUNG S,PARK C D. Optimization of cell geometry for a conventional sputter ion pump by a particle-in-cell simulation[J]. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films,2009,27(3):485−491.
    [7]
    耿健,王晓冬,郭美如,等. 微型溅射离子泵的阳极筒长度对抽气特性的影响[J]. 东北大学学报(自然科学版),2023,44(11):1596−1603.
    [8]
    KÜHN C,RODION G. picFoam:An OpenFOAM based electrostatic Particle-in-Cell solver[J]. Computer Physics Communications,2021,262(1):107853.
    [9]
    耿健,郭美如,王晓冬,等. 微型溅射离子泵放电模拟与抽气特性研究[J]. 真空与低温,2021,27(1):45−51.
    [10]
    TOMONOR T,ABE H. A binary collision model for plasma simulation with a particle code[J]. Journal of Computational Physics,1977,25(3):190−205.
    [11]
    SONG,M Y,CHO H,KARWASZ G P,et al. Cross sections for electron collisions with N2,N2*,and N2+[J]. Journal of Physical and Chemical Reference Data,2023,52(2):023104. doi: 10.1063/5.0150618
    [12]
    ISOARDI T,FERRETTI A,BONMASSAR L,et al. Modeling and simulation of sputter-ion pump performances[J]. Vacuum,2023,209(3):111792.
    [13]
    NANBU K. Theory of cumulative small-angle collisions in plasmas[J]. Physical Review E,1997,55(4):46−52.
    [14]
    NANBU K. Probability theory of electron–molecule,ion–molecule,molecule–molecule,and coulomb collisions for particle modeling of materials processing plasmas and cases[J]. IEEE Transactions on Plasma Science,2000,28(3):971−990. doi: 10.1109/27.887765
    [15]
    JEPSEN R L. The physics of sputter-ion pumps[C]//Proceedings of the 4th International Vacuum Congress,1968:317-324.
    [16]
    ROKHMANENKOV A S,KURATOV S E. Numerical simulation of penning gas discharge in 2D/3D setting[J]. Journal of Physics:Conference Series,2019,1250(1):12−36.
    [17]
    SCHUURMAN W. Investigation of a low pressure Penning discharge[J]. Physica,1967,36(1):136−160. doi: 10.1016/0031-8914(67)90086-9
    [18]
    SIGMUND P. Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets[J]. Physical Review,1969,184(2):383−416. doi: 10.1103/PhysRev.184.383
    [19]
    SEAH M P,CLIFFORD C A,GREEN F M,et al. An accurate semi-empirical equation for sputtering yields I:For argon ions[J]. Surface and Interface Analysis,2005,37(5):444−458. doi: 10.1002/sia.2032
    [20]
    刘玉魁,杨建斌,肖祥正,等. 真空工程设计[M]. 北京:化学工业出版社,2016.
    [21]
    田野. 溅射离子泵阴极板溅射过程的模拟分析[D]. 沈阳:东北大学,2019.
    [22]
    刘亦兵,张本义,秦明,等. LH-300型冷阴极抽氢溅射离子泵的研制[J]. 真空,1980(3):28−38.

Catalog

    Article views (16) PDF downloads (9) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return