QUANTITATIVE STUDY ON（Cs,O）/GaAs UNDER ANNEALING BY ANGULAR DEPENDENT XPS

The annealing effects of the GaAs surface for photocathode were analyzed by quantitative angular-dependent X-ray electron spectroscopy（XPS） technique.The thickness and composition of（Cs,O） layer and （Gs,As） transition layer were first gained. It was found that after heat annealing at 625～650℃ the thickness of （Ga,As） layer became thinner,the atom density of Ga＆ As got larger,the binding of O and As w as eliminated.