CHEN Dao, GUO Deng-zhu, WAN Zhi-hua, et al. THE EFFECTS OF DOPING Sb2O3/Au ON THE OXIDATION RESISTANCE OF MoS2 SPUTTERED FILMS[J]. VACUUM AND CRYOGENICS, 2000, 6(4): 195-200.
Citation: CHEN Dao, GUO Deng-zhu, WAN Zhi-hua, et al. THE EFFECTS OF DOPING Sb2O3/Au ON THE OXIDATION RESISTANCE OF MoS2 SPUTTERED FILMS[J]. VACUUM AND CRYOGENICS, 2000, 6(4): 195-200.

THE EFFECTS OF DOPING Sb2O3/Au ON THE OXIDATION RESISTANCE OF MoS2 SPUTTERED FILMS

  • The oxidation resistance properties of MoS2 sputtered films doping Sb2O3/Au have been studied by X ray photoelectron spectrometry(XPS).The results indicate that the doped films have the denser structure. The doping can improve the oxidation resistance properties of MoS2 sputtered films and change the ratio between sulfur and molybdenum. The oxidation of MoS2 sputtered films only occurs at the surface of the doped films of 2~ 3 molecule layers under the initial oxidation or the moisture environment.The doped films are very well protected under the initial oxidation. So the doping is a good method to resolve the oxidation problem of MoS2 sputtered films.
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