CHANG Xue-sen, BA De-chun, LIU Kun, et al. THE ANALYSIS ON MAGNETIC FIELD,ELECTRIC FIELD AND DEGREE OF VACUUM FOR MAGNETRON SPUTTERING[J]. VACUUM AND CRYOGENICS, 2007, 13(3): 178-182.
Citation: CHANG Xue-sen, BA De-chun, LIU Kun, et al. THE ANALYSIS ON MAGNETIC FIELD,ELECTRIC FIELD AND DEGREE OF VACUUM FOR MAGNETRON SPUTTERING[J]. VACUUM AND CRYOGENICS, 2007, 13(3): 178-182.

THE ANALYSIS ON MAGNETIC FIELD,ELECTRIC FIELD AND DEGREE OF VACUUM FOR MAGNETRON SPUTTERING

  • Macro statistics theory is applied.Rectangle plane magnetron sputtering target is taken as an example to analyze the method to keep the target’s functional model well and optimization condition to get high quality magnetron sputtering thin film under different magnetic field,electrical field and vacuum degree conditions.It indicates that an affinity exists among the magnetron field,electrical field and vacuum degree.For gaining perfect atomic deposition phase through Magnetron Sputtering,the parameters of magnetron field,electrical field and vacuum degree have to be set properly.The parametric setting of magnetron field,electrical field and vacuum degree has to follow intrinsic rules and relations of them.
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